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N Type , Te-doped InSb Wafer , 4”, Prime Grade -Powerway Wafer

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N Type , Te-doped InSb Wafer , 4”, Prime Grade -Powerway Wafer

Name: N Type Tedoped InSb Wafer 4 Prime Grade Powerway Wafer
Brand: PAM-XIAMEN
Price: 1 USD

Brand Name : PAM-XIAMEN

Place of Origin : China

MOQ : 1-10,000pcs

Payment Terms : T/T

Supply Ability : 10,000 wafers/month

Delivery Time : 5-50 working days

Packaging Details : Packaged in a class 100 clean room environment, in single container, under a nitrogen atmosphere

product name : N Type InSb Wafer

Wafer Diamter : 4 inch

application : photoelectromagnetic device

Grade : Prime Grade

Wafer Thickness : 1000.0±0.5mm

keyword : Indium Antimonide wafer

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N Type , Te-doped InSb Wafer , 4”, Prime Grade -Powerway Wafer

PAM-XIAMEN provides single crystal InSb(Indium Antimonide) wafer growth by Liquid Encapsulated Czochralski ( LEC ) method. Indium Antimonide (InSb) can be supplied as wafers with as-cut, etched or polished finishes and are available in a wide range of carrier concentration, diameter and thickness.PAM-XIAMEN can provide epi ready grade InSb wafer for your MOCVD & MBE epitaxial application .Please contact our engineer team for more wafer information.

N Type, InSb Wafer, 4”, Prime Grade

Wafer Specification
Item	Specifications
Wafer Diameter	4″ 1000.0±0.5mm
Crystal Orientation	4″ (111)AorB±0.1°
Thickness	4″ 1000±25um
Primary flat length	4″ 32.5±2.5mm
Secondary flat length	4″ 18±1mm
Surface Finish	P/E, P/P
Package	Epi-Ready,Single wafer container or CF cassette

Electrical and Doping Specification
Conduction Type	n-type	n-type	n-type
Dopant	Tellurium	Low tellurium	High tellurium
EPD cm-2	≤50
Mobility cm² V-1s-1	≥2.5*104	≥2.5*105	Not Specified
Carrier Concentration cm-3	(1-7)*1017	41014-21015	≥1*1018

Thermal properties of InSb Wafer

Bulk modulus	4.7·1011 dyn cm-1
Melting point	527 °C
Specific heat	0.2 J g-1°C-1
Thermal conductivity	0.18 W cm-1 °C-1
Thermal diffusivity	0.16 cm2 s-1
Thermal expansion, linear	5.37·10-6 °C-1

	Temperature dependence of thermal conductivity n-InSb. Electron concentration at 78 K n (cm-3): 1. 2·1014; 2. 4.8·1016; 3. 4·1018. Solid line shows the temperature dependence of thermal conductivity at high temperatures
	Temperature dependence of thermal conductivity p-InSb. Electron concentration at 78K p (cm-3): 1. 2.7·1014; 2. 5.3·1015; 3. 7.2·1017; 4. 6·1018.
	Temperature dependence of specific heat at constant pressure.
	Temperature dependence of linear expansion coefficient (low temperatures)
	Temperature dependence of linear expansion coefficient (high temperatures)
	Temperature dependence of Sb saturation vapor pressure

Melting point Tm = 800K.

Are You Looking for an InSb Wafer?

PAM-XIAMEN is your go-to place for everything wafers, including InSb wafers, as we have been doing it for almost 30 years! Enquire us today to learn more about the wafers that we offer and how we can help you with your next project. Our group team is looking forward to providing both quality products and excellent service for you!

Product Tags:

indium antimonide wafer

polished silicon wafer

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